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| LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www..com 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K*LT1 3 1 2 SOT- 23 (TO-236AB) Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits 25 20 12 0.5 1 0.2 150 -55+150 Unit V V V A(DC) A(Pulse) W C C 1 BASE COLLECTOR 3 2 EMITTER PC Tj Tstg Single pulse Pw=100ms Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ron Min. 25 20 12 - - - 820 - - - Typ. - - - - - 0.18 - 350 8.0 0.8 Max. - - - 0.5 0.5 0.4 2700 - - - Unit V V V A A V - MHz pF pF IC=10A IC=1mA IE=10A VCB=20V VEB=10V Conditions IC/IB=500mA/20mA VCE=3V, IC=10mA VCE=10V, IE=-50mA, f=100MHz VCB=10V, IE=0A, f=1MHz IB=1mA, Vi=100mV(rms), f=1kHz Measured using pulse current h FE Values Classification, Device Marking and Ordering Information Device L2SD2114KVLT1 L2SD2114KVLT1G L2SD2114KWLT1 L2SD2114KWLT1G hFE 820~1800 820~1800 1200~2700 1200~2700 Marking BV BV (Pb-Free) BW BW (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel L2SD2114K*LT1-1/4 LESHAN RADIO COMPANY, LTD. L2SD2114K*LT1 Electrical characteristic curves 2.0 Ta=25C 1.6A 1.6 2.0A 1.8A 1.2 1.4A 1.2A 1.0A 0.8A 0.8 0.6A 0.4 0.4A 0.2A 0 0 IB=0 0.1 0.2 0.3 0.4 0.5 1000 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) 800 1.2mA 1.0mA COLLECTOR CURRENT : IC(mA) 1.8mA 2.0mA 1.6mA 1.4mA 1000 500 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 Ta=100C 25C -25C VCE=3V Measured using pulse current. 600 0.8mA 0.6mA 400 0.4mA 0.2mA www..com 200 0 0 2 Ta=25C Measured using IB=0mA pulse current. 4 6 8 10 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V) BASE TO EMITTER VOLTAGE : VBE(V) Fig.1 Grounded emitter output characteristics() Fig.2 Grounded emitter output characteristics() Fig.3 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 10000 5000 DC CURRENT GAIN : hFE 2000 1000 500 200 100 50 20 10 1 2 5 10 20 DC CURRENT GAIN : hFE Ta=25C Measured using pulse current. VCE=5V 10000 5000 2000 1000 500 200 100 50 20 Ta=100C 25C -25C VCE=3V Measured using pulse current. 2000 1000 500 200 100 50 20 10 5 2 1 2 5 10 20 IC/IB=100 50 25 10 Ta=25C Measured using pulse current. 3V 1V 50 100 200 500 1000 10 1 2 5 10 20 50 100 200 500 1000 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) Fig.4 DC current gain vs. collector current() Fig.5 DC current gain vs. collector current() Fig.6 Collector-emitter saturation voltage vs. collector current() COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 2000 1000 500 200 100 50 20 10 5 2 1 2 5 10 20 Ta=100C 25C -25C BASE SATURATION VOLTAGE : VBE(sat) (mV) BASE SATURATION VOLTAGE : VBE(sat)(mV) IC/IB=25 Measured using pulse current. 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 Ta=25C Pulsed IC/IB=10 25 50 100 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 Ta=-25C 25C 100C lC/lB=10 Measured using pulse current. 50 100 200 5001000 50 100 200 500 1000 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) Fig.7 Collector-emitter saturation voltage vs. collector current() Fig.8 Base-emitter saturation voltage vs. collector current() Fig.9 Base-emitter saturation voltage vs. collector current() L2SD2114K*LT1-2/4 LESHAN RADIO COMPANY, LTD. L2SD2114K*LT1 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) 10000 TRANSITION FREQUENCY : fT (MHz) 5000 2000 1000 500 200 100 50 20 10 -1 -2 -5 -10 -20 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 ON RESISTANCE : Ron() Ta=25C VCE=10V Measured using pulse current. 1000 500 100 Ta=25C f=1MHz IE=0A 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 Ta=25C f=1kHz Vi=100mV(rms) RL=1k www..com -50 -100 -200 -500 -1000 1 2 5 10 EMITTER CURRENT : IE(mA) COLLECTOR TO BASE VOLTAGE : VCB(V) BASE CURRENT : IB(mA) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Fig.12 Output-on resistance vs. base current Ron measurement circuit RL=1k Input vi 1kHz 100mV(rms) IB V Output v0 Ron= v0 vi-v0 xRL L2SD2114K*LT1-3/4 LESHAN RADIO COMPANY, LTD. L2SD2114K*LT1 SOT-23 NOTES: www..com A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. ANODE 2. NO CONNECTION 3. CATHODE 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SD2114K*LT1-4/4 |
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